Temperature sensor circuits for integrated circuit devices

ABSTRACT

An integrated circuit device having insulated gate field effect transistors (IGFETs) having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure has been disclosed. The integrated circuit device may include a temperature sensor circuit and core circuitry. The temperature senor circuit may include at least one portion formed in a region other than the region that the IGFETs are formed as well as at least another portion formed in the region that the IGFETs having a plurality of horizontally disposed channels that can be vertically aligned above a substrate with each channel being surrounded by a gate structure are formed. By forming a portion of the temperature sensor circuit in regions below the IGFETs, an older process technology may be used and device size may be decreased and cost may be reduced.

This application claims the benefit of U.S. Provisional PatentApplication Ser. No. 63/029,598, filed May 25, 2020, the contents ofwhich are incorporated by reference herein.

TECHNICAL FIELD

The present invention relates generally to an integrated circuit (IC)device, and more particularly to improving temperature sensing for an ICdevice.

BACKGROUND OF THE INVENTION

As transistor sizes get smaller and operating voltages become lower,temperature sensor circuits may not operate and if the operating voltageof the temperature sensor increases, the transistors may have integrityproblems due to high voltage stress. Furthermore, temperature sensorcircuit structures may be incompatible with new technology and/orconsume too much of the active footprint of an integrated circuitdevice.

In light of the above, it would be desirable to provide temperaturesensor circuits having accurate temperature determinations while beingintegrated with new device technology having a smaller footprint effecton an integrated circuit device and maintains integrity.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of an integrated circuit device accordingto an embodiment.

FIG. 2 is a block schematic diagram of an integrated circuit deviceaccording to an embodiment is set forth.

FIG. 3A is a top plan view of an integrated circuit device includingtransistors according to an embodiment.

FIG. 3B is a cross sectional view of an integrated circuit deviceincluding transistors according to an embodiment.

FIG. 3C is a cross sectional view of an integrated circuit deviceincluding transistors according to an embodiment.

FIGS. 4A and 4B are circuit schematic diagrams of complementary IGFETshaving a plurality of horizontally disposed channels that can bevertically aligned above a substrate with each channel being surroundedby a gate structure according to an embodiment.

FIG. 5 is a block schematic diagram of a temperature sensor circuitaccording to an embodiment.

FIG. 6 is a circuit schematic diagram of a reference voltage generatoraccording to an embodiment.

FIGS. 7A and 7B are circuit schematic diagrams of a step down circuitaccording to an embodiment.

FIGS. 8A and 8B are circuit schematic diagrams of a step down circuitaccording to an embodiment.

FIG. 9 is a circuit schematic diagram of a pump circuit according to anembodiment.

FIG. 10 is a block schematic diagram of a circuit including atemperature output circuit and a power up circuit according to anembodiment.

FIG. 11 is a circuit schematic diagram of an upper window limitcomparator circuit according to an embodiment.

FIG. 12 is a circuit schematic diagram of a lower window limitcomparator circuit according to an embodiment.

FIG. 13 is a schematic diagram of an integrated circuit device accordingto an embodiment.

FIG. 14 is a circuit schematic diagram of a reference voltage generatoraccording to an embodiment.

FIG. 15 is a circuit schematic diagram of a pump circuit according to anembodiment.

FIG. 16 is a circuit schematic diagram of a reference voltage generatoraccording to an embodiment.

FIG. 17 is a block schematic diagram of a temperature sensor circuitaccording to an embodiment.

FIG. 18 is a block schematic diagram of core circuitry according to anembodiment.

FIG. 19 is a block schematic diagram of core circuitry according to anembodiment.

FIG. 20 is a block schematic diagram of core circuitry according to anembodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

According to the embodiments set forth below, an integrated circuitdevice may include a plurality of transistors having a plurality ofvertically stacked horizontal channels with improved gate control whichoperate at a low power supply potential (for example 0.5 volts). Theintegrated circuit device may further include a temperature sensorcircuit. The temperature sensor circuit may include transistors having aplurality of vertically stacked horizontal channels. The temperaturesensor circuit may operate at a substantially higher power supplypotential and may include at least one active device (active circuitelement) having a different process technology than the transistorshaving a plurality of vertically stacked horizontal channels.

Referring now to FIG. 1, an integrated circuit device according to anembodiment is set forth in a cross-sectional schematic diagram and giventhe general reference character 100.

Integrated circuit device 100 may include regions (110, 120, 130, and140). Region 110 may be a semiconductor region that can include aprocess for making a bipolar junction transistor (BJT). Region 120 maybe an insulator layer. Region 130 may be a silicon material such assilicon, silicon carbide, or epitaxial silicon, as just a few examples.Region 140 may include a plurality of transistors, each transistorhaving a plurality of vertically stacked horizontal channels.

Integrated circuit device 100 may be a processor device, a memorydevice, or the like.

Region 110 may be formed using an older process technology that requiresmuch less cost than region 140. Region 110 may contain at least aportion of a temperature sensor circuit as will be discussed later inthe specification. Region 140 may contain the circuitry for processingfunctions of a processor device or control circuits, decoding circuits,and memory cells of a memory device as just a few examples.

Integrated circuit device 100 may be contiguous structures, such that,regions may be deposited or bonded in a semiconductor fabricationfacility and preferably all formed on a contiguous wafer in a multipleof units and then separated before packaged or set in a multi-chippackage. For example, regions (110, 120, 130, and 140) may be contiguousregions with essentially no separation other than a region border formedby a change of materials. Bonding of regions may be performed usingwafer to wafer bonding, for example regions (110 and/or 120) may beformed on a first semiconductor wafer and regions (120 and/or 130, and140) may be formed on a second semiconductor wafer, then the first andsecond wafer may be bonded using a wafer to wafer bonding techniquefollowed by dicing and packaging to form the integrated circuit device.Alternatively, regions (110 and/or 120) may be formed on a firstsemiconductor wafer and regions (120 and/or 130, and 140) may be formedon a second semiconductor wafer, then either the first or second wafermay be diced and a die pick and place may be used to place dies on thefirst or second intact wafer, followed by dicing and packaging to formthe integrated circuit device.

Referring now to FIG. 2, a block schematic diagram of an integratedcircuit device according to an embodiment is set forth and given thegeneral reference character 200.

Integrated circuit device 200 can include a temperature sensor circuit210 and core circuitry 220. For example, if integrated circuit device200 is a processor device, core circuitry 220 may include processingfunctions and if integrated circuit device 200 is a memory device, corecircuit 220 may include read/write circuitry, control circuitry,decoding circuitry, and memory cells.

Core circuitry 220 may be formed in region 140. However, temperaturesensor circuit 210 may include a first circuit portion 212 formed inregion 110 and a second circuit portion 214 formed in region 140. Inthis way, different technologies may be used to form the temperaturesenor circuit 210 without mixing technologies in region 140, which maybe formed with state of the art cutting edge process technology and maybe incompatible with the first circuit portion 212 of the temperaturesensor circuit 210.

First circuit portion 212 may be electrically connected to secondcircuit portion 214 by way of interconnect wirings (216 and 218).

Temperature sensor circuit 210 may provide temperature signals (Tp1 toTpn) to core circuitry 220 by way of temperature signal bus 230. Corecircuitry 220 may include parameter control circuitry which may changeoperational parameters in response to the state of temperature signals(Tp1 to Tpn). Such parameter control circuitry can include refreshcontrol circuitry that changes the refresh rate in a dynamic randomaccess memory (DRAM) in response to the temperature signals (Tp1 toTpn). Other parameter control circuitry can include clock controlcircuitry that changes a clock signal operating processing circuitry ina processor device in response to the temperature signals (Tp1 to Tpn).Yet another parameter control circuitry can include read assist andwrite assist control circuitry that enables/disables read assistcircuitry and/or write assist circuitry in a static random access memory(SRAM). Such read assist circuitry and/or write assist circuitry caninclude changing word line potential and or bit line potential during aread and/or write of data in an SRAM memory cell as just a few examples.

A description of the plurality of transistors formed in region 140 willnow be discussed with reference to FIGS. 3A to 3C.

Referring now to FIG. 3A, a top plan view of an integrated circuitdevice including transistors according to an embodiment is set forth andgiven the general reference character 300.

Integrated circuit device 300 may include an N-type insulated gate fieldeffect transistor (IGFET) 310A and a P-type IGFET 310B.

N-type IGFET 310A and P-type IGFET 310B may each include a control gatethat may surround a plurality of horizontally disposed channel regionsthat can be vertically aligned above a substrate.

N-type IGFET 310A may include drain/source contacts 318A, a gate contact316A, a gate structure 314A, and vertically aligned and horizontallydisposed channel region structures 312A.

P-type IGFET 310B may include drain/source contacts 318B, a gate contact316B, a gate structure 314B, and vertically aligned and horizontallydisposed channel region structures 312B.

Referring now to FIG. 3B, a cross sectional view of integrated circuitdevice 300 according to an embodiment is set forth. The cross-sectionalview is along the line II-II of FIG. 3A.

Integrated circuit device 300 may include a N-type IGFET 310A, and aP-type IGFET 310B formed in region 140 above regions (110, 120, and130).

N-type IGFET 310A may include a gate contact 316A, a gate structure314A, and vertically aligned and horizontally disposed channel regions312A, and gate insulating layer 320A. Gate insulating layer 320A maysurround each vertically aligned and horizontally disposed channelregions 312A.

P-type IGFET 310B may include a gate contact 316B, a gate structure314B, and vertically aligned and horizontally disposed channel regions312B, and gate insulating layer 320B. Gate insulating layer 320B maysurround each vertically aligned and horizontally disposed channelregions 312B.

Gate structures (314A and 314B) are each contiguous gate structures thatsurround channel regions (312A and 312B), respectively.

As will be discussed later, IGFETS including vertically aligned andhorizontally disposed channel region structures may be used in corecircuitry 220 and second circuit portion 214 of temperature sensorcircuit 210 of FIG. 2

Referring now to FIG. 3C, a cross sectional view of integrated device300 is set forth. The cross-sectional view is along the line I-I of FIG.3A. As shown in FIG. 3A, there are two lines I-I as the N-type IGFET310A and P-type IGFET 310B may have similar structures except thematerials and/or doping of materials may differ and elements aredesignated with the suffix “A/B” to illustrate such. Semiconductordevice 300 may include N-type and P-type IGFETs (310A/B) formed inregion 140 above regions (110, 120, and 130). IGFET 310A/B may include agate contact 316A/B, a gate structure 314A/B, vertically aligned andhorizontally disposed channel regions 312A/B, gate insulating layer320A/B, and drain/source contacts 318A/B. Gate structure 316A/B and gateinsulating layer 320A/B may surround each vertically aligned andhorizontally disposed channel regions 312A/B.

Drain/source contacts (318A/B) are commonly shared by the plurality ofchannel regions 312A/B, respectively to form common drain/sourceterminals for each IGFET (310A and 310B).

IGFETs (310A and 310B) may be formed by forming a layered crystal of twomaterials over region 130. For example, layers of silicon and silicongermanium may be formed. An etch and deposit step may then be used toform the source/drain regions (318A and 318B) may be formed. The siliconlayer may form the channel regions (312A and 312B). After a verticaletch, the silicon germanium layers may be etched by using a chemicalthat can selectively etch silicon germanium with the source/drainregions (318A and 318B) used as support structures. Next, the gatedielectric layers (320A and 320B) may be formed using atomic layerdeposition, for example of hafnium-dioxide. Then gate structure (316Aand 316B) may be formed using atomic layer deposition of a metal layer,for example, tungsten. The n-type IGFETs 310A may have source/drainregions 438A doped with n-type carriers, such as phosphorous and/orarsenic, for example. The p-type IGFETs 310B may have source/drainregions 318B doped with p-type carriers, such as boron, for example.IGFETs (310A and 310B) may have a gate length L (i.e. channel length) ofless than about 10 nm and may preferably have a gate length L of lessthan about 6 nm.

Referring now to FIGS. 4A and 4B, circuit schematic diagrams ofcomplementary IGFETs having a plurality of horizontally disposedchannels that can be vertically aligned above a substrate with eachchannel being surrounded by a gate structure according to an embodimentare set forth. FIG. 4A is a N-channel IGFET 400A and FIG. 4B is aP-channel IGFET 400B.

N-channel IGFET 400A includes a control gate terminal 410A, a firstsource/drain terminal 420A, and a second source/drain terminal 430A.Control gate terminal 410A may be electrically connected to control gate412A. Control gate 412A may be drawn as a plurality of control gates oneach side of a plurality of channel region 414A. In reality, controlgate 412A may surround a plurality of horizontally disposed channelregions 414A that can be vertically aligned above a substrate. Eachchannel region 414A may form a controllable impedance path between firstsource/drain terminal 420A, and second source/drain terminal 430A.Control gate 412A may provide control to the controllable impedance pathbased on a threshold voltage for distinguishing between a high impedancepath and a low impedance path.

P-channel IGFET 400B includes a control gate terminal 410B, a firstsource/drain terminal 420B, and a second source/drain terminal 430B.Control gate terminal 410B may be electrically connected to control gate412B. Control gate 412B may be drawn as a plurality of control gates oneach side of a plurality of channel region 414B. In reality, controlgate 412B may surround a plurality of horizontally disposed channelregions 414B that can be vertically aligned above a substrate. Eachchannel region 414B may form a controllable impedance path between firstsource/drain terminal 420B, and second source/drain terminal 430B.Control gate 412B may provide control to the controllable impedance pathbased on a threshold voltage for distinguishing between a high impedancepath and a low impedance path.

It is understood throughout the FIGS., any IGFET drawn similarly toIGFETs (400A and/or 400B) illustrate IGFETs that have a plurality ofhorizontally disposed and vertically aligned channel regions.

Referring now to FIG. 5, a block schematic diagram of a temperaturesensor circuit according to an embodiment is set forth and given thegeneral reference character 500. Temperature sensor circuit 500 maycorrespond to temperature sensor circuit 210 in integrated circuitdevice 200 of FIG. 2.

Temperature sensor circuit 500 may include a reference generator circuit510, a pump circuit 520, step down circuits (530 and 540) and atemperature output circuit 550.

Pump circuit 520 may receive a power supply potential VDD and mayprovide a boosted power supply potential Vpmp as an output. Referencegenerator circuit 510 may receive boosted power supply potential Vpmpand may provide a reference voltage V_(BGREF) to step down circuit 530 atemperature dependent reference voltage V_(TEMP) to step down circuit540. Reference voltage V_(BGREF) may be essentially independent oftemperature and temperature dependent reference voltage V_(TEMP) may bea temperature dependent potential.

Step down circuit 530 may provide a stepped down reference voltageVS_(BGREF) which may also be essentially independent of temperature andessentially proportional to reference voltage V_(BGREF). Step downcircuit 540 may provide a stepped down temperature dependent referencevoltage VS_(TEMP) that is essentially proportional to temperaturedependent reference voltage V_(TEMP).

Temperature output circuit 550 may receive stepped down referencevoltage VS_(BGREF) and stepped down temperature dependent referencevoltage VS_(TEMP) and may provide temperature signals Tp1-Tpn, where nis the number of temperature signals provided. Each temperature signalTp1-Tpn may indicate a temperature range or temperature window in whichintegrated circuit device 100 is operating. Temperature signals Tp1-Tpnmay be generated by comparing the stepped down reference voltageVS_(BGREF), which is essentially temperature independent, with steppeddown temperature dependent reference voltage VS_(TEMP) and activatingthe temperature signal Tp1-Tpn to indicate the temperature window inwhich integrated circuit device 100 (FIG. 1) is operating based on thecomparison. As noted with reference to FIG. 2, temperature sensorcircuit 500 may include a first circuit portion 212 formed in region 110and a second circuit portion 214 formed in region 140 of integratedcircuit device 100.

Reference voltage generator 510 will now be described with reference toFIG. 6.

Referring now to FIG. 6, a reference voltage generator according to anembodiment is set forth in a circuit schematic diagram.

The reference voltage generator 510 may include a bandgap referenceinput section 610 and a bandgap reference output section 620. Bandgapreference input section 610 may provide a temperature dependentreference voltage V_(TEMP). The potential of temperature dependentreference voltage V_(TEMP) may change inversely to the change in thetemperature of the integrated circuit 100. Bandgap reference outputsection 620 can receive temperature dependent reference voltage V_(TEMP)and may provide an essentially temperature independent reference voltageV_(BGREF). An example of a bandgap reference output section providing atemperature independent reference voltage can be seen in U.S. Pat. No.6,150,872 incorporated herein by reference or U.S. Pat. No. 6,549,065incorporated herein by reference, as just two examples.

Bandgap reference input section 610 may include bipolar transistors(Q602 and Q604), resistor R600, transistors (P602 and P604), andamplifier AMP600. Bipolar transistor Q602 may have an emitter commonlyconnected to a negative input of amplifier AMP600 and a drain oftransistor P602. Bipolar transistor Q604 may have an emitter connectedto a first terminal of resistor R600. Bipolar transistors (Q602 andQ604) may have bases and collectors commonly connected to a groundterminal. Alternatively, in some cases the bases and collectors may beconnected to a negatively charged substrate voltage, as just one moreexample. Resistor R600 may have a second terminal commonly connected toa positive input of amplifier AMP600 and a drain of transistor P604.Amplifier AMP600 may provide temperature dependent reference voltageV_(TEMP) as an output, which is also fed back to the gates oftransistors (P602 and P604). Transistors (P602 and P604) may havesources connected to boosted power supply voltage Vpmp.

In bandgap reference input section 610, the feedback (via transistorsP602 and P604) of amplifier AMP600 biases the second terminal ofresistor R600 and the emitter of bipolar transistor Q602 to beessentially the same voltage. However, in a bandgap reference inputsection 610, it is known that the voltage across resistor R600 has apositive temperature characteristic in that VR1=(kT/q)×ln(n), where k isBoltzman's constant, q is electronic charge, and n is the junction arearatio of diode configured bipolar transistors Q604 to Q602. Thus, astemperature increases, current through resistor R600 must increase toprovide the positive temperature characteristic. This is accomplished byincreasing the current in transistor P604 by lowering the voltageV_(TEMP).

Bipolar transistors (Q602 and Q604) may be substrate lateral or verticalpnp bipolar transistors and may be at least a portion of first circuitportion 212 formed in region 110 of integrated circuit device 100(FIG. 1) and transistor Q604 may be sized at nQ602. Transistors (P602and P604) may be p-channel insulated gate field effect transistors(IGFET) having a plurality of vertically stacked horizontal channelssuch as IGFET 310B illustrated in FIGS. 3A to 3C and IGFET 400Billustrated in FIG. 4B. Transistors (P602 and P604) may be at least aportion of second circuit portion 214 formed in region 140 of integratedcircuit device 100 (FIG. 1).

Bipolar transistors (Q602 and Q604) and transistors (P602 and P604) maybe active circuit components (active circuit elements), while resistorR600 and interconnect wirings (between circuit components) may beconsidered passive. Bipolar transistors (Q602 and Q604), i.e. baseregions, collector regions, and emitter regions, may be formedcompletely within region 110 and transistors (P602 and P604), i.e.source regions, gate regions, and drain regions, may be formedcompletely within region 140. Passive components, such as resistor R600and interconnect wirings may be formed in any of regions (110, 120, 130,and/or 140). Bipolar transistors (Q602 and Q604) may be essentially forma p-n junction diode circuit element, each having the emitter regionforming an anode terminal and the base terminal forming a cathodeterminal.

Referring now to FIG. 7A, a circuit schematic diagram of a step downcircuit according to an embodiment is set forth and given the generalreference character 700A. Step down circuit 700A may be used as stepdown circuit 530 in temperature sensor circuit 500 of FIG. 5.

Step down circuit 700A may include resistors (R710 and R720). Resistor710 may have a first terminal connected to a ground potential and asecond terminal commonly connected to a first terminal of resistor R720to provide stepped down reference voltage VS_(BGREF). Resistor R720 mayhave a second terminal connected to receive reference voltage V_(BGREF).Resistors (R710 and R720) may be made of the exact same type ofresistive material to ensure that their temperature variations areidentical and proportional. In this way, stepped down reference voltageVS_(BGREF) can also be essentially independent of temperature. Thestepped down reference voltage VS_(BGREF) can be a low enough voltagesuch that IGFET, such as IGFETs (400A and 400B) (FIGS. 4A and 4B) havinga plurality of horizontally disposed and vertically aligned channelregions do not receive undue voltage stress that can cause, for example,breakdown of a gate insulating layer 320A/B (FIGS. 3B and 3C).

Referring now to FIG. 7B, a circuit schematic diagram of a step downcircuit according to an embodiment is set forth and given the generalreference character 700B. Step down circuit 700B may be used as stepdown circuit 530 in temperature sensor circuit 500 of FIG. 5.

Step down circuit 700B may include IGFETs (N702, N704, and N706). EachIGFET (N702, N704, and N706) can include a plurality of horizontallydisposed and essentially vertically aligned channel regions and may ben-type IGFETs. IGFET N702 may have a source terminal connected to aground potential and a source terminal and a drain terminal terminalcommonly connected to a source terminal of IGFET N704 to provide steppeddown reference voltage VS_(BGREF). IGFET N702 may have a drain terminaland a gate terminal commonly connected to a source terminal of IGFETN706. IGFET N706 may have a drain terminal and a gate terminal commonlyconnected to receive reference voltage V_(BGREF). IGFETs (N702, N704,and N706) may be made identical in size and may be “layed out” to beidentical in geometric shape to ensure that their temperature variationsare identical and proportional. In this way, stepped down referencevoltage VS_(BGREF) can also be essentially independent of temperature.The stepped down reference voltage VS_(BGREF) can be a low enoughvoltage such that IGFET, such as IGFETs (400A and 400B) (FIGS. 4A and4B) having a plurality of horizontally disposed and vertically alignedchannel regions do not receive undue voltage stress that can cause, forexample, breakdown of a gate insulating layer 320A/B (FIGS. 3B and 3C).It is noted that there may be more or less than the number of IGFETs(N702, N704, and N706) illustrated in FIG. 7B and the tap point forstepped down reference voltage VS_(BGREF) may be at a different pointdepending on the voltage magnitude desired.

Referring now to FIG. 8A, a circuit schematic diagram of a step downcircuit according to an embodiment is set forth and given the generalreference character 800A. Step down circuit 800A may be used as stepdown circuit 540 in temperature sensor circuit 500 of FIG. 5.

Step down circuit 800A may include resistors (R810 and R820). Resistor810 may have a first terminal connected to a ground potential and asecond terminal commonly connected to a first terminal of resistor R820to provide stepped down temperature dependent reference voltageVS_(TEMP). Resistor R820 may have a second terminal connected to receivetemperature dependent reference voltage V_(TEMP). Resistors (R810 andR820) may be made of the exact same type of resistive material to ensurethat their temperature variations are identical and proportional. Inthis way, stepped down temperature dependent reference voltage VS_(TEMP)can follow the same temperature dependence and be directly proportionalto temperature dependent reference voltage V_(TEMP). The stepped downtemperature dependent reference voltage VS_(TEMP) can be a low enoughvoltage such that IGFET, such as IGFETs (400A and 400B) (FIGS. 4A and4B) having a plurality of horizontally disposed and vertically alignedchannel regions do not receive undue voltage stress that can cause, forexample, breakdown of a gate insulating layer 320A/B (FIGS. 3B and 3C).

Referring now to FIG. 8B, a circuit schematic diagram of a step downcircuit according to an embodiment is set forth and given the generalreference character 800B. Step down circuit 800B may be used as stepdown circuit 540 in temperature sensor circuit 500 of FIG. 5.

Step down circuit 800B may include IGFETs (N802, N804, and N806). EachIGFET (N802, N804, and N806) can include a plurality of horizontallydisposed and essentially vertically aligned channel regions and may ben-type IGFETs. IGFET N802 may have a source terminal connected to aground potential and a source terminal and a drain terminal commonlyconnected to a source terminal of IGFET N804 to provide stepped downtemperature dependent reference voltage VS_(TEMP). IGFET N802 may have adrain terminal and a gate terminal commonly connected to a sourceterminal of IGFET N806. IGFET N806 may have a drain terminal and a gateterminal commonly connected to receive temperature dependent referencevoltage VB_(TEMP). IGFETs (N802, N804, and N806) may be made identicalin size and may be “layed out” to be identical in geometric shape toensure that their temperature variations are identical and proportional.In this way, stepped down temperature dependent reference voltageVS_(TEMP) can follow the same temperature dependence and be directlyproportional to temperature dependent reference voltage V_(TEMP). Thestepped down temperature dependent reference voltage VS_(TEMP) can be alow enough voltage such that IGFET, such as IGFETs (400A and 400B)(FIGS. 4A and 4B) having a plurality of horizontally disposed andvertically aligned channel regions do not receive undue voltage stressthat can cause, for example, breakdown of a gate insulating layer 320A/B(FIGS. 3B and 3C). It is noted that there may be more or less than thenumber of IGFETs (N802, N804, and N806) illustrated in FIG. 8B and thetap point for stepped down temperature dependent reference voltageVS_(TEMP) may be at a different point depending on the voltage magnitudedesired.

Referring now to FIG. 9, a circuit schematic diagram of a pump circuitaccording to an embodiment is set forth and given the general referencecharacter 900. Pump circuit 900 may be used as pump circuit 520 intemperature sensor circuit 500 of FIG. 5.

Pump circuit 900 may receive power supply potential VDD, a pump clocksignal CP and a complementary pump clock signal CPB and may generate aboosted power supply potential Vpmp.

Pump circuit 900 may include pump circuit stages (PS1, PS2 to PSn),where n is the number of pump circuit stages. Each pump circuit stage(PS1, PS2 to PSn) may increase the boosted power supply potential by nomore than about the power supply potential VDD over the potential of thepower supply potential VDD. For example, one pump circuit stage PS1would provide a boosted power supply potential Vpmp of about 2 timespower supply potential VDD. Thus, n pump circuit stages (PS1, PS2 toPSn) may provide a boosted power supply potential no greater than (n+1)times the potential of the power supply potential VDD.

Pump circuit stage PS1 may receive pump clock signal CP, complementarypump clock signal CPB, and power supply potential VDD as inputs and mayprovide boosted potential outputs at terminals (N11 and N21). Pumpcircuit stage PS1 may include n-type IGFETs (NPS11 and NPS21), p-typeIGFETs (PPS11 and PPS21), and capacitors (C11 and C21). Capacitor C11may receive pump clock signal CP at a first terminal and may have asecond terminal commonly connected to drain terminal of N-type IGFETNPS11, drain terminal of p-type IGFET PPS11, gate terminal of n-typeIGFET NPS21, and gate terminal of p-type IGFET PPS21. Capacitor C21 mayreceive complementary pump clock signal CPB at a first terminal and mayhave a second terminal commonly connected to drain terminal of N-typeIGFET NPS21, drain terminal of p-type IGFET PPS21, gate terminal ofn-type IGFET NPS11, and gate terminal of p-type IGFET PPS11. N-typeIGFETs (NPS11 and NPS21) may have source terminals connected to receivepower supply potential VDD. P-type IGFET PPS11 may have a sourceterminal connected to provide a boosted potential output at terminalN11. P-type IGFET PPS21 may have a source terminal connected to providea boosted potential output at terminal N21.

Pump circuit stage PS2 may receive pump clock signal CP andcomplementary pump clock signal CPB as inputs and may provide boostedpotential outputs at terminals (N12 and N22). Pump circuit stage PS2 mayinclude n-type IGFETs (NPS12 and NPS22), p-type IGFETs (PPS12 andPPS22), and capacitors (C12 and C22). Capacitor C12 may receivecomplementary pump clock signal CPB at a first terminal and may have asecond terminal commonly connected to drain terminal of N-type IGFETNPS12, drain terminal of p-type IGFET PPS12, gate terminal of n-typeIGFET NPS22, and gate terminal of p-type IGFET PPS22. Capacitor C22 mayreceive pump clock signal CP at a first terminal and may have a secondterminal commonly connected to drain terminal of N-type IGFET NPS22,drain terminal of p-type IGFET PPS22, gate terminal of n-type IGFETNPS12, and gate terminal of p-type IGFET PPS12. N-type IGFET NPS12 mayhave source terminal connected to a boosted potential from node N11.N-type IGFET NPS22 may have source terminal connected to a boostedpotential from node N21. P-type IGFET PPS12 may have a source terminalconnected to provide a boosted potential output at terminal N12. P-typeIGFET PPS22 may have a source terminal connected to provide a boostedpotential output at terminal N22.

The dotted line indicates that other pump stage circuits (i.e. PS3, PS4,PS5, etc) may be connected until a nth pump stage circuit PSn may beconnected as the circuit providing the boosted power supply potentialVpmp at a first terminal of a load capacitor Cout. A second terminal ofload capacitor Cout may be connected to a reference potential VSS.

Nth pump stage circuit PSn may receive pump clock signal CP,complementary pump clock signal CPB, and power supply potential VDD asinputs and may provide boosted power supply potential Vpmp at the firstterminal of load capacitor Cout. Pump circuit stage PSn may includen-type IGFETs (NPS1 n and NPS2 n), p-type IGFETs (PPS1 n and PPS2 n),and capacitors (C11 and C21). Capacitor C1 n may receive pump clocksignal CP at a first terminal (when n is odd, complementary pump clocksignal CPB when n is even) and may have a second terminal commonlyconnected to drain terminal of N-type IGFET NPS1 n, drain terminal ofp-type IGFET PPS1 n, gate terminal of n-type IGFET NPS2 n, and gateterminal of p-type IGFET PPS2 n. Capacitor C2 n may receivecomplementary pump clock signal CPB (when n is odd, pump clock signal CPwhen n is even) at a first terminal and may have a second terminalcommonly connected to drain terminal of N-type IGFET NPS2 n, drainterminal of p-type IGFET PPS2 n, gate terminal of n-type IGFET NPS1 n,and gate terminal of p-type IGFET PPS1 n. N-type IGFETs NPS1 n may havea source terminal connected to receive a boosted potential from nodeN1(n−1). N-type IGFETs NPS2 n may have a source terminal connected toreceive a boosted potential from node N2(n−1). P-type IGFET PPS1 n mayhave a source terminal connected to provide boosted power supplypotential Vpmp. P-type IGFET PPS2 n may have a source terminal connectedto provide a boosted power supply potential Vpmp.

The operation of pump circuit 900 will now be explained. When pump clocksignal CP transitions from a logic low to a logic high potential (fromVSS to VDD), n-type IGFET NPS21 turns on and essentially a power supplypotential VDD can be transferred to the terminal of capacitor C21. Atthis time, complementary pump clock signal CPB transitions from a logichigh to a logic low potential (from VDD to VSS). This can turn offn-type IGFET NPS11 and turn on p-type IGFET PPS11. In this way, aboosted potential from capacitor C11 can be transferred to boostedpotential node N11. Next, pump clock signal CP transitions from a logichigh to a logic low potential and complementary pump clock signal CPBtransitions from a logic low to a logic high potential, n-type IGFETNPS11 may turn on and p-type IGFET PPS21 may turn on, while p-type IGFETPPS11 may turn off and n-type IGFET NPS21 may turn off. With p-typeIGFET PPS21 turned on, the boosted potential of capacitor C21 may betransferred to boosted potential node N21. In this way, pump circuitstage PS1 can generate a boosted potential at boosted potential nodes(N11 and N21). The subsequent pump circuit stages (PS2 to PSn) can keepboosting the potentials received in the same manner to provide a finalboosted power supply potential Vpmp at the load capacitor Cout.

All n-type IGFETs and p-type IGFETs in pump circuit 900 are IGFETs thathave a plurality of essentially vertically aligned and horizontallydisposed channel regions. Pump circuit 900 can produce a boosted powersupply potential Vpmp that can be a multiple of power supply potentialVDD without overstressing the gate insulating layers (320A and 320B(FIG. 3B and FIG. 3C) of the P-type IGFETs (PPS11 to PPS2 n) or N-typeIGFETs (NPS11 to NPS2 n) in pump circuit 900 by producing a gate tosource/drain potential on each P-type IGFETs (PPS11 to PPS2 n) or N-typeIGFETs (NPS11 to NPS2 n) that is no greater in magnitude than the powersupply potential VDD.

Pump clock signal CP and complementary pump clock signal CPB can becomplementary clock signals that have a predetermined frequency andperiod toggling between logic high and logic low. The predeterminedfrequency and period can be such that capacitors (C11 to CN2 n) can beadequately charged and discharged to provide the desired boosted powersupply potential Vpmp.

The temperature output circuit 550 of FIG. 5 will now be described withreference to FIG. 10.

Referring now to FIG. 10, a circuit including a temperature outputcircuit 1000 and a power up circuit 1060 is set forth in a blockschematic diagram. Temperature output circuit 1000 may correspond totemperature output circuit 550 of FIG. 5. Temperature output circuit1000 can receive essentially temperature independent stepped downreference voltage VS_(BGREF) and stepped down temperature dependentreference voltage VS_(TEMP) as inputs and may provide temperaturesignals Tp1-Tpn as outputs. Temperature signals Tp1-Tpn may have atemperature range value based on a comparison of the potentials oftemperature independent stepped down reference voltage VS_(BGREF) andstepped down temperature dependent reference voltage VS_(TEMP).Temperature output circuit 1000 may receive a power up signal PUPgenerated by power up circuit 1060. Temperature output circuit 1000 mayset temperature signals Tp1-Tpn to a predetermined temperature rangevalue in response to power up signal PUP. In this way, after a power upof integrated circuit device 100 (FIG. 1), the temperature signalsTp1-Tpn may be set in a known state.

Temperature output circuit 1000 may include an upper window limitcomparator circuit 1010, a lower window limit comparator circuit 1020, acount circuit 1030, a limit detection circuit 1040, and a temperaturewindow change detection circuit 1050.

Upper window limit comparator circuit 1010 can receive temperatureindependent stepped down reference voltage VS_(BGREF), stepped downtemperature dependent reference voltage VS_(TEMP), power up signal PUP,temperature transition detection signal TTD, temperature signalsTp1-Tpn, and a maximum temperature window detection signal Tmax, asinputs. Upper window limit comparator circuit 1010 may provide a upcount signal UP as an output. Lower window limit comparator circuit 1020can receive temperature independent stepped down reference voltageVS_(BGREF), stepped down temperature dependent reference voltageVS_(TEMP), power up signal PUP, a temperature transition detectionsignal TTD, temperature signals Tp1-Tpn, and a minimum temperaturewindow detection signal Tmin as inputs. Lower window limit comparatorcircuit 1020 may provide a down count signal DOWN as an output.

Count circuit 1030 can receive up count signal UP (upper window limitdetection signal), down count signal DOWN (lower window limit detectionsignal), and power up signal PUP as inputs and may provide temperaturesignals Tp1-Tpn as outputs.

Limit detection circuit 1040 receives temperature signals Tp1-Tpn asinputs and provides maximum temperature window detection signal Tmax andminimum temperature window detection signal Tmin as outputs.

Temperature window change detection circuit 1050 can receive the leastsignificant bit Tp1 of temperature signals Tp1-Tpn as inputs and mayprovide temperature transition detection signal TTD as an output.

The operation of temperature output circuit 1000 will now be explained.As mentioned with reference to FIG. 6 above, temperature dependentreference voltage V_(TEMP) decreases as temperature increases andincreases as temperature decreases. Therefore, stepped down temperaturedependent reference voltage VS_(TEMP) decreases as temperature increasesand increases as temperature decreases in the same manner and atessentially the same rate. Thus, as temperature increases, to a point inwhich a temperature range as determined by the value of the temperaturesignals Tp1-Tpn, reaches the temperature window upper limit value, upperwindow limit comparator circuit 1010 detects this in response to thestepped down temperature dependent reference voltage VS_(TEMP) having apredetermined potential and a count up signal UP having an incrementlogic level (logic high). Count circuit 1030 receives this andincrements the temperature signals Tp1-Tpn to provide a value that isthe next increased temperature window value. The temperature signalsTp1-Tpn are fed back to the upper window limit comparator circuit 1010to provide a new temperature window upper limit and also fed back to thelower window limit comparator circuit 1020 to provide a new temperaturewindow lower limit. As temperature decreases to a point in which atemperature range as determined by the value of the temperature signalsTp1-Tpn, reaches the temperature window lower limit value, lower windowlimit comparator circuit 1020 detects this in response to the steppeddown temperature dependent reference voltage VS_(TEMP) having apredetermined potential and a count down signal DOWN having an incrementlogic level (logic high). Count circuit 1030 receives this anddecrements the temperature signals Tp1-Tpn to provide a value that isthe next decreased temperature window value. The temperature signalsTp1-Tpn are fed back to the upper window limit comparator circuit 1010to provide a new temperature window upper limit and also fed back to thelower window limit comparator circuit 1020 to provide a new temperaturewindow lower limit in accordance with the decreased temperature windowvalue.

When temperature signals Tp1-Tpn are changed (either incremented ordecremented), the least significant bit Tp1 transitions logic values andtemperature window change detection circuit 1050 can create atemperature window transition detect signal TTD having a pulse. When thetemperature window transition detect signal TTD has a pulse, the upperwindow limit comparator circuit 1010 and the lower window limitcomparator circuit 1020 may be prevented from generating a count upsignal UP or count down signal DOWN. This may prevent unwantedtransitions.

When temperature signals Tp1-Tpn reach a maximum temperature windowvalue (for example all “1s”) the limit detection circuit 1040 cangenerate a maximum temperature window detection signal Tmax having apredetermined logic level (for example, logic high), which can disablethe upper window limit comparator circuit 1010 to prevent a “roll-over”of count circuit 1030, for example, from all “1s” to all “0s”, whichwould give an erroneous temperature window of operation in accordancewith the value of temperature signals Tp1-Tpn. Likewise, whentemperature signals Tp1-Tpn reach a minimum temperature window value(for example all “0s”) the limit detection circuit 1040 can generate aminimum temperature window detection signal Tmin having a predeterminedlogic level (for example, logic high), which can disable the lowerwindow limit comparator circuit 1020 to prevent a “roll-over” of countcircuit 1030, for example, from all “0s” to all “1s”, which would alsogive an erroneous temperature window of operation in accordance with thevalue of temperature signals Tp1-Tpn.

The count up signal UP may be a temperature upper window limit detectionsignal, the count circuit 1030 may be conceptualized as a controlcircuit that changes the state of at least one temperature signalTp1-Tpn in response to the temperature upper window limit detectionsignal. The count down signal DOWN may be a temperature lower windowlimit detection signal, the count circuit 1030 may be conceptualized asa control circuit that changes the state of at least one temperaturesignal Tp1-Tpn in response to the temperature lower window limitdetection signal.

Referring now to FIG. 11, upper window limit comparator circuit 1010according to an embodiment is set forth in a circuit schematic diagram.Upper window limit comparator circuit 1010 may receive can receivetemperature independent stepped down reference voltage VS_(BGREF),stepped down temperature dependent reference voltage VS_(TEMP), power upsignal PUP, temperature window transition detection signal TTD,temperature signals Tp1-Tpn, and a maximum temperature window detectionsignal Tmax, as inputs. Upper window limit comparator circuit 1010 mayprovide up count signal UP as an output.

Upper window limit comparator circuit 1010 can include an upper limitdetection portion 1110 and an up count signal output portion 1120. Upperlimit detection portion 1110 can receive temperature independent steppeddown reference voltage VS_(BGREF), stepped down temperature dependentreference voltage VS_(TEMP), and temperature signals Tp1-Tpn as inputsand may provide an upper limit detection signal ULD as an output. Upcount signal output portion 1120 can receive upper limit detectionsignal ULD, maximum temperature window detection signal Tmax,temperature window transition detection signal TTD, and power up signalPUP as inputs and may provide up count signal UP as an output.

Upper limit detection portion 1110 can include a p-type IGFET P1110, avariable resistor VR1110, a resistor R1110, and an amplifier AMP1110. Upcount signal output portion 1120 can include a NOR logic gate G1120, aninverter logic gate G1130, a pass gate PG1120, and an n-type IGFETN1120.

P-channel IGFET P1110 may have a source terminal connected to a powersupply potential VDD, a drain commonly connected to a first terminal ofvariable resistor VR1110 and a positive input terminal of amplifierAMP1110 at node ND1110, and a gate terminal connected to receive steppeddown temperature dependent reference voltage VS_(TEMP). The potential ofstepped down temperature dependent reference voltage VS_(TEMP) maychange inversely to the change in the temperature of the integratedcircuit device 100 (FIG. 1). Variable resistor VR1110 may receiveTemperature signals Tp1-Tpn as inputs and may have a second terminalconnected to a first terminal of resistor R1110. Resistor R1110 may havea second terminal connected to a ground potential. Amplifier AMP1110 mayhave a negative input terminal connected to receive temperatureindependent stepped down reference voltage VS_(BGREF). Temperatureindependent stepped down reference voltage VS_(BGREF) may not vary withtemperature and may have an essentially constant potential. Amplifiercircuit AMP1110 may provide upper limit detection signal ULD as anoutput.

NOR logic gate G1120 may receive maximum temperature window detectionsignal Tmax, power up signal PUP, and temperature window transitiondetection signal TTD as inputs and may provide an output. Inverter logicgate G1130 may receive the output of NOR logic gate G1120 at an inputterminal and may provide an output. Pass gate PG1120 may receive theoutput of NOR logic gate G1120 and inverter logic gate G1130 as inputsand may provide a controllable impedance path between the output ofamplifier AMP1110 and the up count signal UP. N-channel IGFET N1120 mayhave a drain terminal connected to up count signal UP, a sourceconnected to a ground potential and a gate terminal connected to receivethe output of inverter logic gate G1130.

Pass gate PG1120 may include an n-channel IGFET N1130 and a p-channelIGFET P1130 having source/drain terminals connected in parallel betweenthe output of amplifier AMP1110 and an output terminal to provide upcount signal UP. N-channel IGFET N1130 may receive the output of NORlogic gate G1120 at a gate terminal. P-channel IGFET P1130 may receivethe output of inverter logic gate G1130 at a gate terminal. In this way,pass gate PG1120 may provide a controllable impedance path between theoutput of amplifier AMP1110 and up count signal UP in response to theoutput of NOR logic gate G1120.

Variable resistor VR1110 sets a resistance value in response to thestate of temperature signals (Tp1-Tpn). In this way, the temperaturewindow upper limit can be set.

IGFETs (P1110, P1130, N1120, and N1130) may be IGFETs including aplurality of vertically stacked horizontal channels as illustrated inFIGS. 3A, 3B, and 3C and may be formed in region 140 of integratedcircuit device 100.

Referring now to FIG. 12, lower window limit comparator circuit 1020according to an embodiment is set forth in a circuit schematic diagram.Lower window limit comparator circuit 1020 may receive can receivetemperature independent stepped down reference voltage VS_(BGREF),stepped down temperature dependent reference voltage VS_(TEMP), power upsignal PUP, temperature window transition detection signal TTD,temperature signals Tp1-Tpn, and a minimum temperature window detectionsignal Tmin, as inputs. Lower window limit comparator circuit 1020 mayprovide down count signal DOWN as an output.

Lower window limit comparator circuit 1020 can include a lower limitdetection portion 1210 and a down count signal output portion 1220.Lower limit detection portion 1210 can receive temperature independentstepped down reference voltage VS_(BGREF), stepped down temperaturedependent reference voltage VS_(TEMP), and temperature signals Tp1-Tpnas inputs and may provide a lower limit detection signal LLD as anoutput. Down count signal output portion 1220 can receive lower limitdetection signal LLD, minimum temperature window detection signal Tmin,temperature window transition detection signal TTD, and power up signalPUP as inputs and may provide down count signal DOWN as an output.

Lower limit detection portion 1210 can include a p-type IGFET P1210, avariable resistor VR1210, a resistor R1210, an amplifier AMP1210, and aninverter logic gate G1210. Down count signal output portion 1220 caninclude a NOR logic gate G1220, an inverter logic gate G1230, a passgate PG1220, and an n-type IGFET N1220.

P-channel IGFET P1210 may have a source terminal connected to a powersupply potential VDD, a drain commonly connected to a first terminal ofvariable resistor VR1210 and a positive input terminal of amplifierAMP1210 at node ND1210, and a gate terminal connected to receive steppeddown temperature dependent reference voltage VS_(TEMP). The potential ofstepped down temperature dependent reference voltage VS_(TEMP) maychange inversely to the change in the temperature of the integratedcircuit device 100 (FIG. 1). Variable resistor VR1210 may receiveTemperature signals Tp1-Tpn as inputs and may have a second terminalconnected to a first terminal of resistor R1210. Resistor R1210 may havea second terminal connected to a ground potential. Amplifier AMP1210 mayhave a negative input terminal connected to receive temperatureindependent stepped down reference voltage VS_(BGREF). Temperatureindependent stepped down reference voltage VS_(BGREF) may not vary withtemperature and may have an essentially constant potential. Amplifiercircuit AMP1210 may have an output connected to an input of inverterlogic gate G1210. Inverter logic gate G1210 may provide lower limitdetection signal LLD as an output.

NOR logic gate G1220 may receive minimum temperature window detectionsignal Tmin, power up signal PUP, and temperature window transitiondetection signal TTD as inputs and may provide an output. Inverter logicgate G1230 may receive the output of NOR logic gate G1220 at an inputterminal and may provide an output. Pass gate PG1220 may receive theoutput of NOR logic gate G1220 and inverter logic gate G1230 as inputsand may provide a controllable impedance path between the output ofamplifier AMP1210 and the down count signal DOWN. N-channel IGFET N1220may have a drain terminal connected to down count signal DOWN, a sourceconnected to a ground potential and a gate terminal connected to receivethe output of inverter logic gate G1230.

Pass gate PG1220 may include an n-channel IGFET N1230 and a p-channelIGFET P1230 having source/drain terminals connected in parallel betweenthe output of inverter logic gate G1210 (i.e. lower limit detectionsignal LLD) and an output terminal to provide down count signal DOWN.N-channel IGFET N1230 may receive the output of NOR logic gate G1220 ata gate terminal. P-channel IGFET P1230 may receive the output ofinverter logic gate G1230 at a gate terminal. In this way, pass gatePG1220 may provide a controllable impedance path between the low limitdetection signal LLD and down count signal DOWN in response to theoutput of NOR logic gate G1220.

Variable resistor VR1210 sets a resistance value in response to thestate of temperature signals (Tp1-Tpn). In this way, the temperaturewindow lower limit can be set.

IGFETs (P1210, P1230, N1220, and N1230) may be IGFETs including aplurality of vertically stacked horizontal channels as illustrated inFIGS. 3A, 3B, and 3C and may be formed in region 140 of integratedcircuit device 100.

Referring now to FIG. 13, an integrated circuit device according to anembodiment is set forth in a schematic diagram and given the generalreference character 1300. Integrated circuit device 1300 can include thesimilar constituents as integrated circuit device 100 and integratedcircuit device 200. Such constituents may be given the same referencecharacter.

The circuit formed on integrated circuit device 1300 can include pads(1310, 1320, and 1330), temperature sensor circuit 210, and corecircuitry 220. Pad 1310 can be electrically connected to temperaturesensor circuit 210 and core circuitry 220 by way of interconnect wiring1312. Pad 1320 can be electrically connected to temperature sensorcircuit 210 and core circuitry 220 by way of interconnect wiring 1322.Pad 1330 can be electrically connected to core circuitry 220 by way ofinterconnect wiring 1332. Pad 1310 may receive a ground potential fromexternal to integrated circuit device 1300. Pad 1320 may receive a powersupply potential VDD from external to integrated circuit device 1300.Pad 1330 may receive/provide an external signal from/to external tointegrated circuit device 1300. Examples of external signals can includeaddress signals, data signals, and/or control signals as just a fewexamples. Signals may differ from power supply potentials in that theycan toggle frequently between a first logic level and a second logiclevel instead of remaining essentially at one level for the duration ofthe operation of the device. Furthermore, a signal may differ from apower supply potential in that a signal may provide information to beused by integrated circuit device 1300 or provided from integratedcircuit device 1300. Temperature sensor circuit 210 can providetemperature signals (Tp1 to Tpn) to core circuitry 220 by way oftemperature signal bus 230. Temperature signal bus 230 may include ninterconnect signal wirings.

Core circuitry 220 may be formed in region 140. However, temperaturesensor circuit 210 may include a first circuit portion 212 formed inregion 110 and a second circuit portion 214 formed in region 140. Inthis way, different technologies may be used to form the temperaturesenor circuit 210 without mixing technologies in region 140, which maybe formed with state of the art cutting edge process technology and maybe incompatible with the first circuit portion 212 of the temperaturesensor circuit 210.

First circuit portion 212 may be electrically connected to secondcircuit portion 214 by way of interconnect wirings (216 and 218).Interconnect wirings (216 and 218) can be formed through regions (130and 140) and may include vertical conductive vias.

Interconnect wiring 1312 can be formed through regions (140, 130, and120) and may include vertical conductive vias as well as horizontallydisposed conductive local interconnections. Interconnect wiring 1322 canbe formed through region 140 may include vertical conductive vias aswell as horizontally disposed conductive local interconnections.Interconnect wiring 1332 can be formed through region 140 may include atleast one vertical conductive via.

Referring now to FIG. 14, a reference voltage generator according to anembodiment is set forth in a circuit schematic diagram.

The reference voltage generator of FIG. 14 may include the sameconstituents as the reference voltage generator 510 of FIG. 6. Thereference voltage generator of FIG. 14 may differ in that first circuitportion 212 of bandgap reference input section 610 may have transistors(P602 and P604) that have collector regions electrically connected to anegative boosted power supply voltage Vnpmp and band gap referenceoutput section 620 may receive negative boosted power supply voltageVnpmp.

By using a boosted power supply voltage Vnpmp that is negative withrespect to a ground potential, temperature dependent reference voltageV_(TEMP) and essentially temperature independent reference voltageV_(BGREF) may have a low enough magnitude that step down circuits (530and 540) (FIG. 5) may not be necessary. A band gap circuit may generatea band gap reference that is essentially about 1.25 volts or close tothe theoretical band gap of silicon. However, when using a negativepumped voltage in the band gap voltage generation, the potential may beprovided with a low enough magnitude to be in a proper operating rangeof circuitry including transistors that have channels that arevertically aligned and horizontally disposed and manufactured at deepsub-micron range without stressing and damaging the integrated circuitdevice.

Referring now to FIG. 15, a circuit schematic diagram of a pump circuitaccording to an embodiment is set forth and given the general referencecharacter 1500. Pump circuit 1500 may be used to generate the boostedpower supply voltage Vnpmp. Boosted power supply voltage Vnpmp may be anegative voltage with respect to ground potential VSS.

Pump circuit 1500 may receive power supply potential VSS, a pump clocksignal CP and a complementary pump clock signal CPB and may generate aboosted power supply potential Vnpmp.

Pump circuit 1500 may include pump circuit stages (NPS1 and NPS2). It isunderstood that more pump circuit stages may be added to provide agreater magnitude boosted power supply potential Vnpmp. Each pumpcircuit stage (NPS1 and NPS2) may increase the magnitude of boostedpower supply potential Vnpmp by no more than about the power supplypotential VDD more negative than the potential of the power supplypotential VSS. For example, one pump circuit stage NPS1 would provide aboosted power supply potential Vnpmp of about negative of power supplypotential VDD. Thus, 2 pump circuit stages (NPS1 and NPS2) may provide aboosted power supply potential Vnpmp no greater in magnitude than −2times the potential of the power supply potential VDD. With a powersupply potential of about 0.5 volts, pump circuit 1500 may provide aboosted power supply potential Vnpmp of essentially no greater inmagnitude than about −1.0 volts.

Pump circuit stage NPS1 may receive pump clock signal CP, complementarypump clock signal CPB, and power supply potential VSS as inputs and mayprovide boosted potential outputs at terminals (ND11 and ND21). Pumpcircuit stage NPS1 may include n-type IGFETs (NN11 and NN21), p-typeIGFETs (PNS11 and PNS21), and capacitors (CN11 and CN21). Capacitor CN11may receive complementary pump clock signal CPB at a first terminal andmay have a second terminal commonly connected to drain terminal ofN-type IGFET NN11, drain terminal of p-type IGFET PNS11, gate terminalof n-type IGFET NN12, and gate terminal of p-type IGFET PN12. CapacitorC21 may receive pump clock signal CP at a first terminal and may have asecond terminal commonly connected to drain terminal of N-type IGFETNN12, drain terminal of p-type IGFET PN12, gate terminal of n-type IGFETNN11, and gate terminal of p-type IGFET PN11. P-type IGFETs (PN11 andPN12) may have source terminals connected to receive power supplypotential VSS. N-type IGFET NN11 may have a source terminal connected toprovide a boosted potential output at terminal NN11. N-type IGFET NN12may have a source terminal connected to provide a boosted potentialoutput at terminal NN12.

Pump circuit stage NPS2 may receive pump clock signal CP andcomplementary pump clock signal CPB as inputs and may provide boostedpower supply potential Vnpmp as an output. Pump circuit stage NPS2 mayinclude n-type IGFETs (NN12 and NN22), p-type IGFETs (PN12 and PN22),and capacitors (CN12 and CN22). Capacitor CN12 may receive pump clocksignal CP at a first terminal and may have a second terminal commonlyconnected to drain terminal of N-type IGFET NN12, drain terminal ofp-type IGFET PN12, gate terminal of n-type IGFET NN22, and gate terminalof p-type IGFET PN22. Capacitor CN22 may receive complementary pumpclock signal CPB at a first terminal and may have a second terminalcommonly connected to drain terminal of N-type IGFET NN22, drainterminal of p-type IGFET PN22, gate terminal of n-type IGFET NN12, andgate terminal of p-type IGFET PN12. N-type IGFET NN12 and N-type IGFETNN22 may have source terminals commonly connected to provide boostedpower supply potential Vnpmp at a first terminal of capacitor CNout.Capacitor CNout may have a second terminal electrically connected topower supply potential VSS.

All n-type IGFETs and p-type IGFETs in pump circuit 1500 are IGFETs thathave a plurality of essentially vertically aligned and horizontallydisposed channel regions. Pump circuit 1500 can produce a boosted powersupply potential Vnpmp that have a magnitude that can be a multiple ofpower supply potential VDD without overstressing the gate insulatinglayers (320A and 320B (FIG. 3B and FIG. 3C) of the P-type IGFETs (PN11to PN22) or N-type IGFETs (NN11 to NN22) in pump circuit 1500 byproducing a gate to source/drain potential on each P-type IGFETs (PN11to PN22) or N-type IGFETs (NN11 to NN22) that is no greater in magnitudethan the power supply potential VDD.

Pump clock signal CP and complementary pump clock signal CPB can becomplementary clock signals that have a predetermined frequency andperiod toggling between logic high and logic low. The predeterminedfrequency and period can be such that capacitors (CN11 to CN22) can beadequately charged and discharged to provide the desired boosted powersupply potential Vnpmp.

Referring now to FIG. 16, a reference voltage generator according to anembodiment is set forth in a circuit schematic diagram.

The reference voltage generator of FIG. 16 may include the sameconstituents as the reference voltage generator 510 of FIG. 6. Thereference voltage generator of FIG. 16 may differ from the referencevoltage generator of FIG. 6 in that first circuit portion 212 of bandgapreference input section 610 may have transistors (P602 and P604) thathave collector regions electrically connected to a negative boostedpower supply voltage Vnpmp and band gap reference output section 620 mayreceive negative boosted power supply voltage Vnpmp. The referencevoltage generator of FIG. 16 may also differ from the reference voltagegenerator of FIG. 6 in that IGFETs (P604 and P602) of bandgap referenceinput section 610 may each have a source terminal electrically connectedto power supply voltage VDD and band gap reference output section 620may also receive power supply voltage VDD. Power supply voltage VDD maybe provided from external to integrated circuit device 100.

By using a boosted power supply voltage Vnpmp that is negative withrespect to a ground potential, temperature dependent reference voltageV_(TEMP) and essentially temperature independent reference voltageV_(BGREF) may have a low enough magnitude that step down circuits (530and 540) (FIG. 5) may not be necessary. Without step down circuits (530and 540), temperature dependent reference voltage V_(TEMP) andessentially temperature independent reference voltage V_(BGREF) may beconnected directly to temperature output circuit 550 (FIG. 5). A bandgap circuit may generate a band gap reference that is essentially about1.25 volts or close to the theoretical band gap of silicon. However,when using a negative pumped voltage in the band gap voltage generation,the potential may be provided with a low enough magnitude to be in aproper operating range of circuitry including transistors that havechannels that are vertically aligned and horizontally disposed andmanufactured at deep sub-micron range without stressing and damaging theintegrated circuit device.

Referring now to FIG. 17, a block schematic diagram of a temperaturesensor circuit according to an embodiment is set forth and given thegeneral reference character 1700. Temperature sensor circuit 1700 maycorrespond to temperature sensor circuit 210 in integrated circuitdevice 200 of FIG. 2. Temperature sensor circuit 1700 may have similarconstituents as temperature sensor circuit 500 of FIG. 5 and suchconstituents may have the same reference character.

Temperature sensor circuit 1700 may differ from temperature sensorcircuit 500 in that a pump circuit 1500 can generate a boosted powersupply potential Vnpmp electrically connected to reference generator 510so that reference voltage V_(BGREF) and temperature dependent referencevoltage V_(TEMP) may be electrically connected directly to temperatureoutput circuit 550 without the necessity of step down circuits (530 and540) (FIG. 5).

Referring now to FIG. 18, a block schematic diagram of core circuitry isset forth according to an embodiment and given the general referencecharacter 1800.

Core circuitry 1800 can correspond to core circuitry 220 of FIG. 2.

Core circuitry 1800 can include a refresh control circuit 1810, arefresh circuit 1820, and a dynamic random access memory array 1830.Refresh control circuit 1810 can receive temperature signals Tp1-Tpn andprovide a refresh frequency control signal 1812. Refresh circuit 1820can receive refresh frequency control signal 1812 and may provide arefresh signal 1822 at a frequency rate in accordance with the state ofthe at least one refresh frequency control signal. Dynamic random accessmemory array 1830 may receive the refresh signal which in conjunctionwith the state of an address counter (not shown) can refresh a row ofdynamic random access memory cells. In this way, the refresh rate can bechanged in response to the state of temperature signals Tp1-Tpnindicating the temperature window in which the integrated circuit deviceis operating.

Core circuitry 1800 may be used in the integrated circuit device whenthe integrated circuit device includes dynamic random access memorycells, which must be refreshed for data preservation.

Referring now to FIG. 19, a block schematic diagram of core circuitry isset forth according to an embodiment and given the general referencecharacter 1900.

Core circuitry 1900 can correspond to core circuitry 220 of FIG. 2.

Core circuitry 1900 can include a clock frequency control circuit 1910,a clock circuit 1920, and a processor circuit 1930. Clock frequencycontrol circuit 1910 can receive temperature signals Tp1-Tpn and provideat least one clock frequency control signal 1912. Clock circuit 1920 canreceive clock frequency control signal 1912 and may provide a clocksignal 1922 at a frequency rate in accordance with the state of the atleast one clock frequency control signal. Processor circuit 1930 mayreceive the clock signal 1922 which provides a clocking frequency forprocessor circuitry that can be changed in response to the state oftemperature signals Tp1-Tpn indicating the temperature window in whichthe integrated circuit device is operating.

Core circuitry 1900 may be used in the integrated circuit device whenthe integrated circuit device includes processor circuits, such as in amicroprocessor device.

Referring now to FIG. 20, a block schematic diagram of core circuitry isset forth according to an embodiment and given the general referencecharacter 2000.

Core circuitry 2000 can correspond to core circuitry 220 of FIG. 2.

Core circuitry 2000 can include a read assist control circuit 2010, awrite assist control circuit 2030, a read assist circuit 2020, a writeassist circuit 2040, and a static random access memory array 2050. Readassist control circuit 2010 can receive temperature signals Tp1-Tpn andprovide at least one read assist enable signal 2012. Read assist circuit2020 can receive the at least one read assist enable signal 2012 and mayprovide read assist signal 2022 during a read operation when read assistsignal 2012 has an enable logic level. Write assist control circuit 2030can receive temperature signals Tp1-Tpn and provide at least one writeassist enable signal 2032. Write assist circuit 2040 can receive the atleast one write assist enable signal 2032 and may provide a write assistsignal 2042 during a read operation when read assist signal 2032 has anenable logic level. Static random access memory array 2050 may receivethe read assist signal 2022 and write assist signal 2040. Static randomaccess memory array 2050 may modify the read operation when read assistsignal 2022 has a read assist logic level and may not modify the readoperation when read assist signal 2022 has a normal read logic level.Static random access memory array 2050 may modify the write operationwhen write assist signal 2042 has a write assist logic level and may notmodify the read operation when read assist signal 2042 has a normalwrite logic level. Read and/or write assist modifications may includechanging the bit line potential, word line potential, and/or staticrandom access memory cell power supply potential during a read or writeoperation to a static random access memory cell, as just a few examples.

Core circuitry 2000 may be used in the integrated circuit device whenthe integrated circuit device includes static random access memorycells.

Integrated circuit devices (100 and 1300) may be contiguous structures,such that, regions may be deposited or bonded in a semiconductorfabrication facility and preferably all formed on a contiguous wafer ina multiple of units and then separated before packaged or set in amulti-chip package. For example, regions (110, 120, 130, and 140) may becontiguous regions with virtually no separation other than a regionborder formed by a change of materials. Bonding of regions may beperformed using wafer to wafer bonding, for example region 110 may beformed on a first semiconductor wafer and regions (120, 130, and 140)may be formed on a second semiconductor wafer, then the first and secondwafer may be bonded using a wafer to wafer bonding technique followed bydicing and packaging to form the integrated circuit device.Alternatively, region 110 may be formed on a first semiconductor waferand regions (120, 130, and 140) may be formed on a second semiconductorwafer, then either the first or second wafer may be diced and a die pickand place may be used to place dies on the first or second intact wafer,followed by dicing and packaging to form the integrated circuit device.

It is understood that the term pad may be any circuit connection that iselectrically connected to provide or receive a signal or a potentialexternally to the integrated circuit device.

Electrically connected can be a connection through a wiring otherpassive component such as a resistor.

Transistors such as IGFETs, diodes (p-n junctions), and BJTs may beconsidered active circuit elements, while other circuit elements such asinterconnections (i.e. wirings), resistors, inductors, and capacitorsmay be considered passive circuit elements.

A voltage may be expressed as a potential.

A signal can be a data or control signal that can transition betweenlogic levels, as just a few examples. A signal is not a power supplypotential used to provide power to circuitry.

Other electrical apparatus other than semiconductor devices may benefitfrom the invention.

While various particular embodiments set forth herein have beendescribed in detail, the present invention could be subject to variouschanges, substitutions, and alterations without departing from thespirit and scope of the invention. Accordingly, the present invention isintended to be limited only as defined by the appended claims.

What is claimed is:
 1. An integrated circuit device, comprising: atemperature sensor circuit, the temperature sensor circuit including atleast one insulated gate field effect transistor (IGFET) including atleast three substantially horizontally disposed channels that aresubstantially vertically aligned and surrounded by a contiguous controlgate structure; and wherein the temperature sensor circuit provides atleast one temperature signal, the at least one temperature signalindicates a temperature window in which the integrated circuit device isoperating.
 2. The integrated circuit device of claim 1, wherein: thetemperature sensor circuit includes an upper window limit comparatorcircuit coupled to receive a temperature dependent reference potential,the upper window limit comparator circuit detects a temperature windowupper limit based on the potential of the temperature dependentreference potential.
 3. The integrated circuit device of claim 2,wherein: the upper window limit comparator circuit includes the at leastone IGFET, the at least one IGFET has a gate terminal coupled to receivethe temperature dependent reference potential.
 4. The integrated circuitdevice of claim 3, wherein: the upper window limit comparator circuitprovides an upper limit detection signal in response to detecting thetemperature window upper limit being reached.
 5. The integrated circuitdevice of claim 4, wherein: the temperature detector circuit includes acontrol circuit that changes the state of the at least one temperaturesignal in response to the upper limit detection signal.
 6. Theintegrated circuit device of claim 1, wherein: the temperature sensorcircuit includes a lower window limit comparator circuit coupled toreceive a temperature dependent reference potential, the lower windowlimit comparator circuit detects a temperature window lower limit basedon the potential of the temperature dependent reference potential. 7.The integrated circuit device of claim 6, wherein: the lower windowlimit comparator circuit includes the at least one IGFET, the at leastone IGFET has a gate terminal coupled to receive the temperaturedependent reference potential.
 8. The integrated circuit device of claim6, wherein: the lower window limit comparator circuit provides a lowerlimit detection signal in response to detecting the temperature windowlower limit being reached.
 9. The integrated circuit device of claim 8,further including: the temperature detector circuit includes a controlcircuit that changes the state of the at least one temperature signal inresponse to the lower limit detection signal.
 10. The integrated circuitdevice of claim 1, further including: the temperature detector circuitincludes a reference generator circuit, the reference generator circuitincludes the at least one IGFET and provides a temperature dependentreference potential.
 11. The integrated circuit device of claim 10,wherein: the reference generator circuit provides an essentiallytemperature independent reference potential.
 12. The integrated circuitdevice of claim 1, wherein: a refresh control circuit coupled to receivethe at least one temperature signal, the refresh control circuit sets arefresh rate in response to the at least one temperature signal whereinthe integrated circuit device is a dynamic random access memory device.13. The integrated circuit device of claim 1, wherein: a read assistcontrol circuit coupled to receive the at least one temperature signal,the read assist control circuit enables and disables a read assistcircuit in response to the at least one temperature signal, the readassist circuit assists a read operation of static random access memorycells formed on the integrated circuit device.
 14. The integratedcircuit device of claim 1, wherein: a write assist control circuitcoupled to receive the at least one temperature signal, the write assistcontrol circuit enables and disables a write assist circuit in responseto the at least one temperature signal, the write assist circuit assistsa write operation of data to static random access memory cells formed onthe integrated circuit device.
 15. The integrated circuit device ofclaim 1, further including: a frequency control circuit coupled toreceive the at least one temperature signal, the frequency controlcircuit sets the frequency of a clock signal in response to the at leastone temperature signal and the integrated circuit device includesprocessor circuitry coupled to receive the clock signal.
 16. Theintegrated circuit device of claim 1, further including: a power upcircuit, the power up circuit provides a power up signal having a powerup logic level in response to detecting power received by the integratedcircuit device, the temperature sensor circuit coupled to receive thepower up signal and provides a predetermined state to the at least onetemperature signal in response to the power up signal.
 17. Theintegrated circuit device of claim 1, wherein: the at least oneinsulated gate field effect transistor (IGFET) including at least threesubstantially horizontally disposed channels that are substantiallyvertically aligned and surrounded by a contiguous control gate structurehas a gate length of less than about 6 nm.
 18. The integrated circuitdevice of claim 1, further including: a semiconductor substrateproviding a first region; a second region formed over the first region;the at least one insulated gate field effect transistor (IGFET) isformed in the second region; and at least one active circuit element ofthe temperature sensor circuit is formed in the first region andelectrically connected to the at least one IGFET.
 19. The integratedcircuit device of claim 18, wherein: the at least one active circuitelement is a p-n junction diode having an anode terminal electricallyconnected to the at least one IGFET.
 20. The integrated circuit deviceof claim 1, wherein: the at least one insulated gate field effecttransistor (IGFET) including at least four substantially horizontallydisposed channels that are substantially vertically aligned andsurrounded by a contiguous control gate structure, the at least foursubstantially horizontally disposed channels are electrically connectedto a common source region.